Beskrivning
HEXFET power MOSFET
Polaritet: N
Type of transistor
|
N-MOSFET | |
Technology
|
HEXFET® | |
Polarisation
|
unipolar | |
Drain-source voltage
|
200V | |
Drain current
|
30A | |
Power dissipation
|
214W | |
Case
|
TO247AC | |
Gate-source voltage
|
±20V | |
On-state resistance
|
75mΩ | |
Mounting
|
THT | |
Gate charge
|
123nC | |
Kind of package
|
tube | |
Kind of channel
|
enhanced |
Recensioner
Det finns inga recensioner än.