Beskrivning
Lateral power MOSFET
- Specifically designed for audio amplifier applications
- High thermal conductivity
- Excellent frequency characteristics
- Integral protection diode
- Free from current concentration, resulting in a high resistance to electrical destruction.
- Temperature characteristics which inherently protect against short circuit fault conditions and thermal runaway.
Polaritet: P
Drain-source-spänning (VDSS ) : -200 V
Drain-ström (ID): -8 A
Gate – Source voltage: +/- 14 V
Förlusteffekt (PD): 125 W
Kapsel: TO-247
RoHS Compliant: Ja
Komplementär: ECX10N20
Ekvivalent med 2SJ162
EXICON Mosfets have been designed specifically for high power linear use.
They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design.
Freedom from secondary breakdown and thermal runaway make them extremely reliable and remove the need for protection circuitry.
These advantages together with wide bandwidth, low drive requirements, and ease of paralleling make it possible for the simple construction of robust amplifiers with excellent sonic characteristics.
Recensioner
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