Beskrivning
MOSFET
The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Easy to parallel
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
- ESD gate protection
Polaritet: N
Drain-source-spänning (VDSS ) : 500 V
Drain-ström (ID): 30 mA
On-resistans (RDS (ON)) : 850 Ω
Förlusteffekt (PD): 740 mW
Kapsel: TO-92
RoHS Compliant: Ja
Recensioner
Det finns inga recensioner än.