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LND150N3-G, MOSFET N-kanal, 30 mA, 500 V, 850 ohm, 0 V

5,00 kr

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Artikelnr: TRA-LND150N3-G Kategori: Etiketter: ,



The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
  • Free from secondary breakdown
  • Low power drive requirement
  • Easy to parallel
  • Excellent thermal stability
  • Integral source-drain diode
  • High input impedance and low CISS
  • ESD gate protection

Polaritet: N
Drain-source-spänning (VDSS ) : 500 V
Drain-ström (ID): 30 mA
On-resistans (RDS (ON)) : 850 Ω
Förlusteffekt (PD): 740 mW
Kapsel: TO-92
RoHS Compliant: Ja


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