Beskrivning
2N7000 FET
Polaritet: N
Features
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
Drain-gate-spänning (VDG ) : 60 V
Drain Current (ID): 0,2 mA
Noll styrspänning Tömning Ström Max (IDSS): mA
Noll styrspänning Tömning Ström Min (IDSS): mA
Avbrottsspänning, grindkälla Vgs(off): V
Förlusteffekt (PD): 350 mW
Kapsel: TO-92
RoHS Compliant: Ja
