2N7000 N-MOSFET Transistor; 60V; 0,2A; 0,35W; TO92

Beskrivning

2N7000 FET

Polaritet: N

Features
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.

Drain-gate-spänning (V_DG ) : 60 V
Drain Current (I_D):  0,2 mA
Noll styrspänning Tömning Ström Max (I_DSS):   mA
Noll styrspänning Tömning Ström Min (I_DSS):   mA
Avbrottsspänning, grindkälla Vgs(off):  V
Förlusteffekt (P_D): 350 mW
Kapsel: TO-92
RoHS Compliant: Ja

>> Datablad